The basic scenario of resistive switching in TiO₂ (Jameson et al., 2007) assumes the formation and electromigration of oxygen vacancies between the electrodes (Baiatu et al., 1990), so that the distribution of concomitant n-type conductivity (Janotti et al., 2010) across the volume can eventually be controlled by an external electric bias, as schematically shown in Figure 1B. Direct observations with transmission electron microscopy (TEM) revealed more complex electroforming processes in TiO₂ thin films. In one of the studies, a continuous Pt filament between the electrodes was observed in a planar Pt/TiO₂/Pt memristor (Jang et al., 2016). As illustrated in Figure 1C, the corresponding switching mechanism was suggested as the formation of a conductive nanofilament with a high concentration of ionized oxygen vacancies and correspondingly reduced Ti³⁺ ions. These ions induce detachment and migration of Pt atoms from the electrode via strong metal–support interactions (Tauster, 1987). Another TEM investigation of a conductive TiO₂ nanofilament revealed it to be a Magnéli phase Ti_nO_2n−1 (Kwon et al., 2010). Supposedly, its formation results from an increase in the concentrations of oxygen vacancies within a local nanoregion above their thermodynamically stable limit. This scenario is schematically shown in Figure 1D. Other hypothesized point defect mechanisms involve a contribution of cation and anion interstitials, although their behavior has been studied more in tantalum oxide (Wedig et al., 2015; Kumar et al., 2016). The plausible origins and mechanisms of memristive switching have been comprehensively reviewed in topical publications devoted to metal oxide memristors (Yang et al., 2008; Waser et al., 2009; Ielmini, 2016) as well as TiO₂ (Jeong et al., 2011; Szot et al., 2011; Acharyya et al., 2014). The resistive switching mechanisms in memristive materials are regularly revisited and updated in the themed review publications (Sun et al., 2019; Wang et al., 2020).

In addition to consistency, manufacturers must also consider the cost implications of buff percentage. Higher levels of coating on titanium dioxide particles can increase production costs, as more coating materials are required. However, a lower buff percentage may lead to a lower quality product that does not meet the needs of customers. Balancing the cost and quality considerations of buff percentage is a key challenge for manufacturers in the titanium dioxide industry.

At the same time, the company took the lead in building a product application testing system in the industry, and formed a relatively complete product application testing system. Among them, the hue of blue-phase R838 titanium dioxide reaches the world-class level. The gloss of R838 titanium dioxide, a silicon-aluminum coated product, has surpassed other domestic silicon-aluminum coated products, and reached or even exceeded some domestic zirconium-aluminum products. Titanium dioxide for color masterbatch is recognized by customers for its high whiteness, high coverage and other indicators, the product market share has been greatly increased, and it enjoys high brand awareness and reputation at home and abroad.